Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes-Reference-Cited by-同舟云学术

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

Published:2020-07 Issue: Volume:1004 Page:343-348
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yamazaki Yuichi¹,Chiba Yoji¹,Sato Shin Ichiro²^ORCID,Makino Takahiro¹,Yamada Naoto¹,Satoh Takahiro¹,Kojima Kazutoshi³,Hijikata Yasuto⁴,Tsuchida Hidekazu⁵,Hoshino Norihiro⁵,Lee Sang Yun⁶,Ohshima Takeshi¹^ORCID

Affiliation:

1. National Institutes for Quantum and Radiological Science and Technology

2. National Institutes for Quantum and Radiological Science and Technology (QST)

3. National Institute of Advanced Industrial Science and Technology (AIST)

4. Saitama University

5. Central Research Institute of Electric Power Industry (CRIEPI)

6. Center for Quantum Information, Korea Institute of Science and Technology (KIST)

Abstract

We demonstrated optically detected magnetic resonance (ODMR) measurements using three-dimensional (3D) arrayed silicon vacancies (VSis) in in-plane SiC pn diodes. Proton beam writing successfully created 3D arrayed VSis using different ion (proton) energies. The results of PL mapping analysis indicate that the features of luminescent spot such as size and depth can be estimated by a Monte Carlo simulation (SRIM). This suggests that diagnosis at any locations in SiC devices can be realized using VSi quantum sensors. Luminescent spots with different depth ranging 4-60 μm showed similar ODMR spectra including its contrast, which means that a similar sensor sensitivity is expected. The results suggest that 3D arrayed VSi can act as quantum sensor elements with uniform sensitivity in SiC devices.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1004.343.pdf

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