Author:
Christle David J.,Falk Abram L.,Andrich Paolo,Klimov Paul V.,Hassan Jawad Ul,Son Nguyen T.,Janzén Erik,Ohshima Takeshi,Awschalom David D.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference30 articles.
1. Saddow, S. E. & Agarwal, A. K. Advances in Silicon Carbide Processing and Applications (Artech House, 2004).
2. Baranov, P. G. et al. EPR identification of the triplet ground state and photoinduced population inversion for a Si–C divacancy in silicon carbide. JETP Lett. 82, 441–443 (2005).
3. Son, N. T. et al. Divacancy in 4H–SiC. Phys. Rev. Lett. 96, 055501 (2006).
4. Tol, J. v. et al. High-field phenomena of qubits. Appl. Magn. Reson. 36, 259–268 (2009).
5. Weber, J. R. et al. Quantum computing with defects. Proc. Natl Acad. Sci. USA 107, 8513–8518 (2010).
Cited by
376 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献