Divacancy in 4H-SiC-Reference-Cited by-同舟云学术

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Divacancy in 4H-SiC

Published:2006-02-06 Issue:5 Volume:96 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Son N. T.,Carlsson P.,ul Hassan J.,Janzén E.,Umeda T.,Isoya J.,Gali A.,Bockstedte M.,Morishita N.,Ohshima T.,Itoh H.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.96.055501/fulltext

Reference17 articles.

1. Divacancy in3C−and4H−SiC:An extremely stable defect

2. Ab initiostudy of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials

3. Annealing of vacancy-related defects in semi-insulating SiC

4. Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC

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2. Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna;Nano Letters;2024-07-17

3. Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing;Journal of Semiconductors;2024-07-01

4. Properties of Z1 and Z2 Deep-Level Defects in n-Type Epitaxial and High-Purity Semi-Insulating 4H-SiC;Crystals;2024-06-07

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