Divacancy in3C−and4H−SiC:An extremely stable defect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.085202/fulltext
Reference41 articles.
1. Intrinsic Defects in Cubic Silicon Carbide
2. Silicon vacancy related defect in 4H and 6H SiC
3. Radiation-induced defect centers in 4H silicon carbide
4. Electrical and optical characterization of SiC
5. Deep level defects in electron-irradiated 4H SiC epitaxial layers
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3. Defect formation energies of Ag- and Sr-doped 3C-SiC: A first-principles study;International Journal of Computational Materials Science and Engineering;2023-08-30
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