Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations-Reference-Cited by-同舟云学术

Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

Published:2021-01-11 Issue:2 Volume:118 Page:021106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamazaki Yuichi¹^ORCID,Chiba Yoji¹²,Sato Shin-ichiro¹^ORCID,Makino Takahiro¹,Yamada Naoto¹,Satoh Takahiro¹,Kojima Kazutoshi³^ORCID,Hijikata Yasuto²^ORCID,Tsuchida Hidekazu⁴,Hoshino Norihiro⁴,Lee Sang-Yun⁵,Ohshima Takeshi¹^ORCID

Affiliation:

1. National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan

2. Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

3. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

4. Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan

5. Department of Physics and Photon Science at Gwangju Institute of Science and Technology, Gwangju 123, South Korea

Funder

MEXT Q-LEAP

IAEA CRP

JSPS KAKENHI

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0028318

Reference19 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

3. Real-Time Aging Detection of SiC MOSFETs

4. Coherent control of single spins in silicon carbide at room temperature

5. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

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