Impact Ionization Coefficients of 4H-SiC-Reference-Cited by-同舟云学术

Impact Ionization Coefficients of 4H-SiC

Published:2004-06 Issue: Volume:457-460 Page:673-676
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hatakeyama Tetsuo¹,Watanabe Takatoshi²,Kojima Kazutoshi³,Sano Nobuyuki⁴,Shiraishi K.,Kushibe Mitsuhiro⁵,Imai Seiji¹,Shinohe Takashi¹,Suzuki Takaya⁶,Tanaka Tomoyuki⁵,Arai Kazuo³

Affiliation:

1. Toshiba Corporation

2. Corporate R&D Center, Toshiba Corporation

3. National Institute of Advanced Industrial Science and Technology (AIST)

4. University of Tsukuba

5. UPR Ultra-Low-Loss Power Device Technology Research Body

6. National Institute of Advanced Industrial Science and Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.673.pdf

Reference5 articles.

1. A. O Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt: Appl. Phys. Lett. Vol. 71 (1997) , p.90.

2. R. Raghunathan, and B. J. Baliga: Solid-State Electron. Vol. 43 (1999), p.199.

3. S. Nakamura, H. Kumagai, T. Kimoto, and H. Matsunami: Appl. Phys. Lett. May 6, Vol. 80 (2002), p.3355.

4. A. G. Chynoweth: Phys. Rev., vol. 109, no. 5 (1958), p.1537.

5. E. Bellotti, H-E Nilsson, K. F. Brennan, P. P Ruden, and R. Trew: J. of Appl. Phys. Vol. 87(2000), p.3864 Corresponding author: tetsuo2. hatakeyama@toshiba. co. jp, Phone: +81-44-549-2142, Fax: +81-44-520-1501.

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