Anisotropy in breakdown field of 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1477271
Reference17 articles.
1. High Power and High Frequency Silicon Carbide Devices
2. Study of avalanche breakdown and impact ionization in 4H silicon carbide
3. Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
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