Optical beam induced current measurements: principles and applications to SiC device characterization-Reference-Cited by-同舟云学术

Optical beam induced current measurements: principles and applications to SiC device characterization

Published:2009-05-21 Issue:10 Volume:206 Page:2273-2283
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Raynaud Christophe,Nguyen Duy-Minh,Dheilly Nicolas,Tournier Dominique,Brosselard Pierre,Lazar Mihai,Planson Dominique

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200825183/fullpdf

Reference20 articles.

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4. S. Round M. Heldwein J. Kolar I. Hofsajer P. Friedrichs IAS Conference, 2005, pp. 410-416.

5. http://www.siced.de

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