Role of Simulation Technology for the Progress in Power Devices and Their Applications-Reference-Cited by-同舟云学术

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Role of Simulation Technology for the Progress in Power Devices and Their Applications

Published:2013-02 Issue:2 Volume:60 Page:528-534
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ohashi Hiromichi,Omura Ichiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6415298/06410406.pdf?arnumber=6410406

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Paralleling of IGBT Power Semiconductor Devices and Reliability Issues;Electronics;2023-09-10

2. Optimization for Power Supplies Thermal Regime;2023 46th International Spring Seminar on Electronics Technology (ISSE);2023-05-10

3. Miller-Capacitance Analysis of High-Voltage MOSFETs and Optimization Strategies for LowPower Dissipation;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27

4. Noise-Source Model for Frequency-Domain EMI Simulation of a Single-Phased Power Circuit;IEEE Transactions on Electromagnetic Compatibility;2021-06

5. Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching;2021 International Symposium on Devices, Circuits and Systems (ISDCS);2021-03-03

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