A generation/recombination model assisted with two trap centers in wide band-gap semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4795114
Reference22 articles.
1. Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance
2. Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
4. Ionization rates and critical fields in 4H silicon carbide
5. Impact Ionization Coefficients of 4H-SiC
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