Multiple three-dimensional bottleneck barrier heights regarding fluctuated threshold voltage by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors

Abstract

Abstract We study numerically on multiple three-dimensional bottleneck barrier heights (BBHs3D) which might be origins of the fluctuated threshold voltage (V th) induced by random dopant fluctuation, depending on a drain voltage (V d). It is confirmed from variance inflation factor that multiple regression analysis with all the BBHs3D is not suitable to investigate the fluctuated V th. Since 3D bottleneck barrier height minimum (BBH3D,min) has a very high correlation with the other BBHs3D, simple regression analysis with even only one BBH3D,min has a very high correlation with the V th. There is an optimal ordinal number for multiple BBHs3D to be considered to investigate the fluctuated V th. It has been demonstrated that the V th can be expressed more accurately by using my proposed method of simple regression analysis considering optimal multiple BBHs3D. Although the optimal multiple BBHs3D decreases when the V d increases, the improvement is relatively similar regardless of the V d.