Quest for Low-Voltage and Low-Power Integrated Circuits: Towards a Sustainable Future
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/4563670/6449344/06449378.pdf?arnumber=6449378
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sub 0.5 Volt Graphene‐hBN van der Waals Nanoelectromechanical (NEM) Switches;Advanced Functional Materials;2022-10-17
2. Multiple three-dimensional bottleneck barrier heights regarding fluctuated threshold voltage by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors;Japanese Journal of Applied Physics;2022-05-27
3. Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator triple-gate fin-type field-effect transistors;Japanese Journal of Applied Physics;2020-05-04
4. Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation to source and drain extensions;Japanese Journal of Applied Physics;2019-05-16
5. Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations;Japanese Journal of Applied Physics;2018-05-14
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