Influence of SiC hetero-polytype barriers on the performance of IMPATT terahertz diodes-Reference-Cited by-同舟云学术

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Influence of SiC hetero-polytype barriers on the performance of IMPATT terahertz diodes

Published:2021-04 Issue: Volume:152 Page:106844
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wei Wensheng,Mo Yueda,Yu Shouhao,Zheng Junding,Peng Dong-Liang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties;Fissel;Phys. Rep.,2003

2. Chapter 2: General Properties of Bulk SiC. Fabrication, Structure, and Properties;Fan,2014

3. Formation of two-dimensional electron gases in polytypic SiC heterostructures;Polyakov;J. Appl. Phys.,2005

4. Determination of the band offsets of the 4H-SiC/6H-SiC heterojunction using the vanadium donor (0/+) level as a reference;Evwaraye;Appl. Phys. Lett.,1995

5. Electronic properties of SiC polytypes: charge neutrality level and interfacial barrier heights;Brudnyi;Superlattice. Microst.,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density;Materials;2024-05-07

2. An UMOSFET integrated with graded semi-super-junction and 3C/4H–SiC hetero-crystalline freewheeling junction;Microelectronics Journal;2023-12

3. Simulation on different orientation hexagonal SiC-based hetero-polytype IMPATT terahertz diodes;Journal of Crystal Growth;2023-01

4. Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates;Superlattices and Microstructures;2021-08

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