Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=6S1/a=06HC06/pdf
Reference39 articles.
1. Quest for Low-Voltage and Low-Power Integrated Circuits: Towards a Sustainable Future
2. Simulation of Statistical Variability in Nano MOSFETs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Multiple three-dimensional bottleneck barrier heights regarding fluctuated threshold voltage by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors;Japanese Journal of Applied Physics;2022-05-27
2. Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor;Chinese Physics B;2022-01-01
3. Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator triple-gate fin-type field-effect transistors;Japanese Journal of Applied Physics;2020-05-04
4. Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation to source and drain extensions;Japanese Journal of Applied Physics;2019-05-16
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