Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning-Reference-Cited by-同舟云学术

Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

Published:2015-06 Issue: Volume:821-823 Page:193-196
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

von Känel Hans¹,Miglio Leo¹,Crippa Danilo²,Kreiliger Thomas³^ORCID,Mauceri Marco⁴,Puglisi Marco⁴,Mancarella Fulvio⁵,Anzalone Ruggero⁶,Piluso Nicolo’⁶,La Via Francesco⁶

Affiliation:

1. Pile Growth Tech srl

2. LPE SpA

3. ETH Zurich

4. Epitaxial Technology Center

5. CNR-IMM

6. Istituto per la Microelettronica e Microsistemi IMM-CNR

Abstract

The heteroepitaxial growth of 3C-SiC on Si (001) and Si (111) substrates deeply patterned at a micron scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitation of lateral expansion. Stacking fault densities and wafer bowing may be drastically reduced for optimized pattern geometries.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.193.pdf

Reference11 articles.

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