Reducing Planar Defects in 3C–SiC
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.200506466/fullpdf
Reference19 articles.
1. Growth and Properties of β‐SiC Single Crystals
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4. V. V. Afanas'ev, F. Ciobanu, G. Pensl, A. Stesmans, in Silicon Carbide, Recent Major Results (Eds: W. J. Choyke, H. Matsunami, G. Pensl), Springer, Berlin 2004, p. 343.
5. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
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