Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations-Reference-Cited by-同舟云学术

Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

Published:2021 Issue:7 Volume:23 Page:1566-1571
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Sarikov Andrey¹²³⁴⁵^ORCID,Marzegalli Anna⁶⁷⁸⁴^ORCID,Barbisan Luca¹²³⁴^ORCID,Zimbone Massimo⁹¹⁰⁴^ORCID,Bongiorno Corrado⁹¹¹⁴,Mauceri Marco¹²¹¹⁴,Crippa Danilo¹³¹⁴⁴,La Via Francesco⁹¹¹⁴^ORCID,Miglio Leo¹²³⁴^ORCID

Affiliation:

1. L-NESS and Department of Materials Science

2. University of Milano-Bicocca

3. 20125 Milan

4. Italy

5. V. Lashkarev Institute of Semiconductor Physics NAS Ukraine

6. L-NESS and Department of Physics

7. Politecnico di Milano

8. 22100 Como

9. IMM-CNR

10. 95128 Catania

11. 95121 Catania

12. LPE

13. LPE S.p.A

14. 20021 Baranzate

Abstract

Stacking fault annihilation mechanism in 3C-SiC epitaxially grown on Si(001) is studied by molecular dynamics simulations and its implications for improvement of 3C-SiC characteristics are provided.

Funder

H2020 LEIT Advanced Materials

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01613F

Reference34 articles.

1. High-Temperature Single-Crystal 3C-SiC Capacitive Pressure Sensor

2. S. E. Saddow and A.Agarwal , Advances in Silicon Carbide Processing and Applications , Artech House Publisher , Boston , 2004

3. Thermal detection mechanism of SiC based hydrogen resistive gas sensors