Thermal detection mechanism of SiC based hydrogen resistive gas sensors-Reference-Cited by-同舟云学术

Thermal detection mechanism of SiC based hydrogen resistive gas sensors

Published:2006-10-30 Issue:18 Volume:89 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fawcett Timothy J.,Wolan John T.,Lloyd Spetz Anita,Reyes Meralys,Saddow Stephen E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2360905

Reference21 articles.

1. Electrical properties dependent on H2 gas for new structure diode of Pt–thin WO3–SiC

2. Using a MISiC-FET sensor for detecting NH/sub 3/ in SCR systems

3. Studies on Ru/3C-SiC Schottky Junctions for High Temperature Hydrogen Sensors

4. A. L. Spetz, S. Nakagomi, and S. Savage, in Advances in Silicon Carbide Processing and Applications, edited by S. E. Saddow and A. Agrawal (Artech House, Boston, 2004), pp. 29–67.

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