Stability of Current Gain in SiC BJTs-Reference-Cited by-同舟云学术

Stability of Current Gain in SiC BJTs

Published:2014-02 Issue: Volume:778-780 Page:1017-1020
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Buono Benedetto¹,Allerstam Fredrik¹,Domeij Martin¹,Konstantinov Andrei¹,Gumaelius Krister¹,Das Hrishikesh¹,Neyer Thomas¹

Affiliation:

1. Fairchild Semiconductor

Abstract

In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how wafer scanning techniques can be used to reject BJT dies with basal plane dislocations, thereby eliminating the risk for bipolar degradation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.1017.pdf

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