Analysis of Operational Degradation of SIC BJT Characteristics
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4294904/4294905/04294947.pdf?arnumber=4294947
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor;Japanese Journal of Applied Physics;2014-03-11
2. Stability of Current Gain in SiC BJTs;Materials Science Forum;2014-02
3. Investigation of Current Gain Degradation in 4H-SiC Power BJTs;Materials Science Forum;2012-05
4. Bipolar Integrated Circuits in 4H-SiC;IEEE Transactions on Electron Devices;2011-04
5. Improvement of Current Gain in Triple Ion Implanted 4H-SiC Bipolar Junction Transistor with Etched Extrinsic Base Regions;IEEJ Transactions on Electronics, Information and Systems;2010
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