Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors-Reference-Cited by-同舟云学术

Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Published:2009-01 Issue:1 Volume:49 Page:32-37
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Muzykov Peter G.,Kennedy Robert M.,Zhang Qingchun (Jon),Capell Craig,Burk Al,Agarwal Anant,Sudarshan Tangali S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference36 articles.

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2. SiC smart power JFET technology for high-temperature applications;Sankin;Mater Sci Forum,2006

3. Rozario LV, Sadwick LP, Hwu RJ, King DB. SiC BGJFET inverter for high temperature/power applications. In: Fourth International High Temperature Electronics Conference, HITEC; 1998. p. 29–33.

4. Kelley R, Mazzola MS. SiC JFET gate driver design for use in DC/DC converters. APEC 2006. In: 21st Annual IEEE Applied Power Electronics Conference and Exposition; 2005. p. 4.

5. Schafmeister F, Herold S, Kolar JW. Evaluation of 1200 V–Si–IGBTs and 1300 V–SiC–JFETs for application in three-phase very sparse matrix AC–AC converter systems. APEC 2003. In: 18th Annual IEEE Applied Power Electronics Conference and Exposition 2003;1:241–55.

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