Affiliation:
1. TranSiC /Fairchild Semiconductor.
2. Mississippi State University
Abstract
Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in
high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid
integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power
semiconductor module is highly desirable for such applications in order to improve the efficiency
and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature
smart power applications that allows for on-chip integration of control circuitry and normally-off
power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with
maximum switching frequency > 20 MHz and normally-off 900 V power switch have been
fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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