Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving-Reference-Cited by-同舟云学术

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Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving

Published:2018-06-01 Issue:6 Volume:E101.C Page:409-415
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

ONO Hideki¹,SIMOYAMA Takasi¹,OKUMURA Shigekazu¹,IMAI Masahiko¹,YAEGASHI Hiroki¹,SASAKI Hironori¹

Affiliation:

1. Photonics Electronics Technology Research Association (PETRA)

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E101.C/6/E101.C_409/_pdf

Reference9 articles.

1. [1] J. Liu, D.D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D.T. Danielson, J. Michel, and L.C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett., vol.87, no.011110, July 2005. 10.1063/1.1993749

2. [2] J. Wang, W.Y. Loh, H. Zang, M.B. Yu, K.T. Chua, T.H. Loh, J.D. Ye, R. Yang, X.L. Wang, S.J. Lee, B.J. Cho, G.Q. Lo, and D.L. Kwong, “Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform,” Proc. 2007 4th IEEE International Conference on Group IV Photonics, WP1, Sept. 2007. 10.1109/group4.2007.4347664

3. [3] W.Y. Loh, J. Wang, J.D. Ye, R. Yang, H.S. Nguyen, K.T. Chua, J.F. Song, T.H. Loh, Y.Z. Xiong, S.J. Lee, M.B. Yu, G.Q. Lo, and D.L. Kwong, “Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget,” IEEE Electron Device Lett., vol.28, no.11, pp.984-986, Nov. 2007. 10.1109/led.2007.906814

4. [4] J. Mathews, R. Roucka, J. Xie, S.-Q. Yu, J. Menéndez, and J. Kouvetakis, “Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications,” Appl. Phys. Lett., vol.95, no.133506, Oct. 2009. 10.1063/1.3238327

5. [5] D. Zhang, C. Xue, B. Cheng, S. Su, Z. Liu, X. Zhang, G. Zhang, C. Li, and Q. Wang, “High-responsivity GeSn short-wave infrared p-i-n photodetectors,” Appl. Phys. Lett., vol.102, no.141111, April 2013. 10.1063/1.4801957

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1. PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band;Optics Express;2023-01-13

2. Si Photonic-Integrated Chip Assembly With Waveguide Ge Avalanche Photodiode for 10 Gbps L-Band Optical Access Networks;IEEE Photonics Journal;2022-10

3. Reduced threading dislocation density in a germanium epitaxial film coalesced on an arrayed silicon-on-insulator strip;Japanese Journal of Applied Physics;2022-08-19

4. Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate;Journal of Vacuum Science & Technology B;2021-07

5. Enhancement of L-band optical absorption in strained epitaxial Ge on Si-on-quartz wafer: Toward extended Ge photodetectors;Journal of Applied Physics;2020-10-07

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