Si Photonic-Integrated Chip Assembly With Waveguide Ge Avalanche Photodiode for 10 Gbps L-Band Optical Access Networks-Reference-Cited by-同舟云学术

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Si Photonic-Integrated Chip Assembly With Waveguide Ge Avalanche Photodiode for 10 Gbps L-Band Optical Access Networks

Published:2022-10 Issue:5 Volume:14 Page:1-8
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Ono Hideki¹^ORCID,Fujikata Junichi²,Noguchi Masataka³,Takahashi Hiroyuki¹,Itoh Masanori¹,Shimura Daisuke¹,Yaegashi Hiroki¹^ORCID,Sasaki Hironori¹

Affiliation:

1. Sensing Technologies R&D Department, Innovation Promotion Center, Oki Electric Industry Company, Ltd., Warabi, Japan

2. Graduate School of Technology, Industrial and Social Sciences, Tokushima University, Tokushima, Japan

3. Secure System Platform Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/9869536/09874780.pdf?arnumber=9874780

Reference23 articles.

1. Multiplication noise in uniform avalanche diodes

2. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

3. Impact ionization coefficients in Si1−xGex

4. Waveguide Germanium Photodetector with High Bandwidth and High L-band Responsivity

5. A high-responsivity photodetector absent metal-germanium direct contact

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