Enhancement of L-band optical absorption in strained epitaxial Ge on Si-on-quartz wafer: Toward extended Ge photodetectors-Reference-Cited by-同舟云学术

Enhancement of L-band optical absorption in strained epitaxial Ge on Si-on-quartz wafer: Toward extended Ge photodetectors

Published:2020-10-07 Issue:13 Volume:128 Page:133107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Noguchi Kyosuke¹,Nishimura Michiharu²,Tsusaka Yoshiyuki³^ORCID,Matsui Junji⁴,Ishikawa Yasuhiko¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan

2. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

3. Graduate School of Material Science, University of Hyogo, 3-2-1 Kouto, Kamigori, Hyogo 678-1297, Japan

4. Synchrotron Radiation Nanotechnology Center, University of Hyogo, 1-490-2 Kouto, Shingu, Tatsuno, Hyogo 679-5165, Japan

Funder

National Institute of Information and Communications Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0023703

Reference69 articles.

1. High-performance Ge-on-Si photodetectors

2. High performance, waveguide integrated Ge photodetectors

3. 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

4. High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

5. 42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

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