A 5–8 GHz wideband 100 W internally matched GaN power amplifier
Author:
Affiliation:
1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University
2. School of Advanced Materials and Nanotechnology, Xidian University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/12/6/12_12.20150172/_pdf
Reference11 articles.
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4. [4] H. Maehara, H. Uchida, N. Kosaka, E. Kuwata, K. Yamanaka, J. Nishihara, K. Kawashima and M. Nakayama: IEEE APMC (2012) 358. DOI:10.1109/APMC.2012.6421597
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1. Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz;IEICE Electronics Express;2018
2. Small-signal switch model of GaN HEMTs for MMIC applications;The Journal of China Universities of Posts and Telecommunications;2016-10
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