Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz-Reference-Cited by-同舟云学术

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Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz

Published:2018 Issue:19 Volume:15 Page:20180775-20180775
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Ahn Chi-Hyung¹,Kim Younghoon²,Oh Sungwon³,Noh Yeonjun²,Lee Dong-Ho⁴,Lee Sanghun⁵,Cho Kunhee⁶,Kim Jusung⁷

Affiliation:

1. Korea Railroad Research Institute

2. Peopleworks Incorporated

3. Agency for Defense Development

4. Department of Information and Communication Engineering, Hanbat National University

5. Wavepia, Incorporated

6. Qualcomm, Incorporated

7. Department of Electronics and Control Engineering, Hanbat National University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/15/19/15_15.20180775/_pdf

Reference9 articles.

1. [1] W. W. Wu, et al.: “Mobile satellite communications,” Proc. IEEE 82 (1994) 1431 (DOI: 10.1109/5.317086).

2. [2] U. K. Mishra, et al.: “GaN-based RF power devices and amplifiers,” Proc. IEEE 96 (2008) 287 (DOI: 10.1109/JPROC.2007.911060).

3. [3] T. Kachi: “Current status of GaN power devices,” IEICE Electron. Express 10 (2013) 20132005 (DOI: 10.1587/elex.10.20132005).

4. [4] D.-H. Shin, et al.: “A decade-bandwidth distributed power amplifier MMIC using 0.25 um GaN HEMT technology,” J. Electromagn. Eng. Sci. 17 (2017) 178 (DOI: 10.26866/jees.2017.17.4.178).

5. [5] H. Park, et al.: “A 6–16 GHz GaN distributed power amplifier MMIC using self-bias,” J. Electromagn. Eng. Sci. 17 (2017) 105 (DOI: 10.5515/JKIEES.2017.17.2.105).

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