Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency-Reference-Cited by-同舟云学术

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Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 Asia Pacific Microwave Conference Proceedings
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Author:

Maehara H.,Uchida H.,Kosaka N.,Kuwata E.,Yamanaka K.,Nishihara J.,Kawashima K.,Nakayama M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6410220/6421477/06421597.pdf?arnumber=6421597

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz;IEEE Journal of Solid-State Circuits;2021-09

2. Recent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating;IEICE Transactions on Electronics;2020-10-01

3. Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells;Micromachines;2018-11-24

4. A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating;Journal of electromagnetic engineering and science;2015-04-30

5. A 5–8 GHz wideband 100 W internally matched GaN power amplifier;IEICE Electronics Express;2015

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