1. [1] I. Angelov, H. Zirath, and N. Rousset, “A New Empirical Nonlinear Model for HEMT and MESFET Devices,” IEEE Trans. Microw. Theory Techn., vol.40, no.12, pp.2258-2266, Dec. 1992.
2. [2] I. Angelov, V. Desmaris, K. Dynefors, P.Å. Nilsson, N. Rorsman,and H. Zirath, “On the large-signal modeling of AlGaN/GaN HEMTs and SiC MESFETs,” EGAAS, pp.309-312, 2005.
3. [3] S. Yoshikawa, K. Nakatani, and T. Ishizaki, “A Study on Non-linear Device Model for Design of High-Efficiency GaN Saturated Power Amplifiers,” IEICE Trans. Electron., vol.J97-C, no.12, pp.463-471, Dec. 2014. (in Japanese)
4. [4] K. Nakatani and T. Ishizaki, “2.4GHz-Band 100W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating,” Journal of Elec. Engineering and Science, vol.15, no.2, pp.82-88, April 2015. 10.5515/jkiees.2015.15.2.82
5. [5] S. Yoshida, R. Ishikawa, and K. Honjo, “Experimental Parameter Extraction Method by Pulse Response Evaluation Applied to Multistage Thermal RC Ladder Circuit in Large-Signal HEMT Model for Analysis of Thermal Memory Effect,” IEICE Trans. Electron., vol.J97-C, no.12, pp.456-462, Dec. 2014.