Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier-Reference-Cited by-同舟云学术

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

Published:2023-10-01 Issue:10 Volume:E106.C Page:605-613
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

SATO Masaru¹,KUMAZAKI Yusuke¹,OKAMOTO Naoya¹,OHKI Toshihiro¹,KURAHASHI Naoko¹,NISHIMORI Masato¹,YAMADA Atsushi¹,KOTANI Junji¹,HARA Naoki¹,WATANABE Keiji¹

Affiliation:

1. Fujitsu

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E106.C/10/E106.C_2022ECP5046/_pdf

Reference30 articles.

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2. [2] Y. Itoh and K. Honjo, “Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems,” IEICE Trans. Electron., vol.E86-C, no.2, pp.108-119, Feb. 2003.

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4. [4] D. Kuchta, D. Gryglewski, and W. Wojtasiak, “A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios,” Micromachines (Basel), vol.11, no.4, p.398, 2020. DOI: 10.3390/mi11040398 10.3390/mi11040398

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