A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/10/107305/pdf
Reference21 articles.
1. A new noise model of HFET with special emphasis on gate-leakage
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. A 5–8 GHz wideband 100 W internally matched GaN power amplifier
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1. Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications;Chinese Physics B;2021-09-29
2. Highly accurateGaN HEMTmodel based on theAngelovmodel with error compensation;Microwave and Optical Technology Letters;2020-07-14
3. The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology;Chinese Physics B;2017-08
4. Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment;Chinese Physics B;2016-11
5. A Scalable Active Compensatory Sub-Circuit for Accurate GaN HEMT Large Signal Models;IEEE Microwave and Wireless Components Letters;2016-06
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