C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

Author:

Shigematsu H.,Inoue Y.,Akasegawa A.,Yamada M.,Masuda S.,Kamada Y.,Yamada A.,Kanamura M.,Ohki T.,Makiyama K.,Okamoto N.,Imanishi K.,Kikkawa T.,Joshin K.,Hara N.

Publisher

IEEE

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

2. A high efficiency X-band internally-matched GaN power amplifier using on-chip harmonic tuning Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27

3. Microwave GaN Transistors;Microwave High Power High Efficiency GaN Amplifiers for Communication;2022

4. High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives;Applied Sciences;2021-11-30

5. A 2-GHz Reconfigurable Transmitter Using A Class-D PA and A Multi-Tapped Transformer;2021 18th International SoC Design Conference (ISOCC);2021-10-06

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