A high efficiency X-band internally-matched GaN power amplifier using on-chip harmonic tuning Technology
Author:
Affiliation:
1. Nanjing Electronic Devices Institute,Nanjing,China
2. South China University of Technology,Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz,Guangzhou,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10106786/10106791/10106866.pdf?arnumber=10106866
Reference9 articles.
1. 14.2W/mm internally-matched AlGaN/GaN HEMT for X-band applications
2. X-band internally harmonic controlled GaN HEMT amplifier with 57% power added efficiency[C];yamanaka;Proc 6th European Microwave Integrated Circuits Conference 2011,0
3. An X-band Internally Matched GaN Power Amplifier with 705W Peak Power and 51.7% PAE
4. GAN HEMT TECHNOLOGIES FOR SPACE AND RADIO APPLICATIONS[J];ishida;Microwave Journal,2011
5. An X-band 500W Internally Matched High Power GaN Amplifier
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