Four-terminal polycrystalline Ge1−x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab8b74/pdf
Reference65 articles.
1. Device structures and carrier transport properties of advanced CMOS using high mobility channels
2. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
3. Interband Transitions inSnxGe1−xAlloys
4. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties
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1. Structural and optical properties of Cu implanted Ge thin films;Physica B: Condensed Matter;2024-02
2. Performance Variation With Changes in Ultrathin Ge Film Thickness of Self-Aligned Double-Gate Cu-MIC Low-Temperature Poly-Ge TFTs on Glass Substrates;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07
3. Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor;Nanomaterials;2022-01-14
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