Four-terminal polycrystalline Ge1−x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters-Reference-Cited by-同舟云学术

Four-terminal polycrystalline Ge1−x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Published:2020-05-01 Issue:5 Volume:59 Page:051008
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyazaki Ryo,Hara Akito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ab8b74/pdf

Reference65 articles.

1. Device structures and carrier transport properties of advanced CMOS using high mobility channels

2. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

3. Interband Transitions inSnxGe1−xAlloys

4. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

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4. Performance Variation With Changes in Ultrathin Ge Film Thickness of Self-Aligned Double-Gate Cu-MIC Low-Temperature Poly-Ge TFTs on Glass Substrates;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor;Nanomaterials;2022-01-14