P‐222: Late‐News Poster: Performance of Double Gate P‐ch Cu‐MIC Poly‐Ge TFTs on Flexible Plastic Substrates and Their Feasibility for CMOS Inverter

Abstract

In this study, p‐ch double‐gate (DG) poly‐Ge thin‐film transistors (TFTs) were fabricated at 385 or 400 °C on flexible plastic bonded to glass substrates. The TFTs were crystallized through metalinduced crystallization using copper (Cu‐MIC). They had an Ion/Ioff ratio of 6 × 103 and a mobility of 8.3 cm2/Vs after the plastic was peeled from the glass substrate. To verify the feasibility of these DG Cu‐MIC poly‐Ge TFTs for complementary metal‐oxide semiconductor (CMOS) on plastic substrates, n‐ch and p‐ch TFTs were fabricated on a glass substrate at 400 °C, which was a suitable temperature for a plastic substrate, and a CMOS inverter was operated after the TFTs were wired.