Performance Variation With Changes in Ultrathin Ge Film Thickness of Self-Aligned Double-Gate Cu-MIC Low-Temperature Poly-Ge TFTs on Glass Substrates
Author:
Affiliation:
1. Graduate school of Engineering, Tohoku Gakuin University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103105.pdf?arnumber=10103105
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3. Four-terminal polycrystalline Gel-xSnx thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters;miyazaki;Jpn J Appl Phys,2020
4. The influence of low copper doping concentrations on the recrystallization process in and the electrical properties of germanium in Ge:Cu thin film transistors
5. p-type thin-film transistors with vacuum-deposited crystallized copper-doped germanium films;fischer;IEEE Electron Device Letters,1983
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1. Evaluation of extremely thin polycrystalline germanium films and their TFT performance fabricated at 400 °C by Cu-induced crystallization on a glass substrate;Japanese Journal of Applied Physics;2024-05-01
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