Abstract
Abstract
A threshold voltage (V
th) shifting method for GaN high electron mobility transistors using self-upward polarized Al1-x
Sc
x
N gate dielectrics was proposed. The direction of the spontaneous polarization was controlled by the insertion of an Al2O3 layer between the Al1-x
Sc
x
N and the AlGaN layers. A V
th shift of 8 V was found by changing the direction of the polarization. The thickness scaling in the Al1-x
Sc
x
N layer from 40 to 30 nm showed a linear relationship to the V
th, revealing to retain a high spontaneous polarization. A high positive V
th for enhancement-mode (E-mode) operation is feasible with the method in combination with a recess process.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
7 articles.
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