Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric

Published:2023-08 Issue:8 Volume:44 Page:1260-1263
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Jeong Yong¹^ORCID,Oh Seung Yoon¹,Yeom Min Jae¹,Kim Seokgi²,Lee Gyuhyung¹,Lee Kyusang³,Kim Sungkyu²,Yoo Geonwook¹^ORCID

Affiliation:

1. School of Electronic Engineering, Soongsil University, Seoul, South Korea

2. Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea

3. Department of Electrical and Computer Engineering, Material Science and Engineering, University of Virginia, Charlottesville, VA, USA

Funder

Ministry of Science and ICT

Ministry of Trade, Industry, and Energy of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10199118/10158346.pdf?arnumber=10158346

Reference27 articles.

1. High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

2. Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

3. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

4. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

5. Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT;Applied Physics Letters;2024-09-02

2. Wide-Range Threshold Voltage Tunable β-Ga₂O₃FETs With a Sputtered AlScN Ferroelectric Gate Dielectric;IEEE Electron Device Letters;2024-09

3. Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance;Applied Physics Letters;2024-07-15

4. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters;Applied Physics Letters;2024-06-10

5. High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric;Applied Physics Letters;2024-06-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3