Al2O3Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers-Reference-Cited by-同舟云学术

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Al2O3Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Published:2004-05-28 Issue:No. 6B Volume:43 Page:L777-L779
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hashizume Tamotsu,Anantathanasarn Sanguan,Negoro Noboru,Sano Eiichi,Hasegawa Hideki,Kumakura Kazuhide,Makimoto Toshiki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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