Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure-Reference-Cited by-同舟云学术

Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

Published:2021-09-01 Issue:9 Volume:14 Page:094009
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tanaka Shunya,Ogino Yuya,Yamada Kazuki,Ogura Reo,Teramura Shohei,Shimokawa Moe,Ishizuka Sayaka,Iwayama Sho,Sato Kosuke^ORCID,Miyake Hideto,Iwaya Motoaki^ORCID,Takeuchi Tetsuya,Kamiyama Satoshi

Funder

NEDO Feasibility Study Program

JSPS KAKENHI

JST CREST

MEXT Private University Research Branding Project

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ac200b/pdf

Reference29 articles.

1. Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

2. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

3. Novel UV devices on high-quality AlGaN using grooved underlying layer

4. Ultraviolet semiconductor laser diodes on bulk AlN

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