Radical analysis and residence-time effect of silicon nitride atomic layer deposition processes with trisilylamine and NH3 plasmas-Reference-Cited by-同舟云学术

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Radical analysis and residence-time effect of silicon nitride atomic layer deposition processes with trisilylamine and NH3 plasmas

Published:2020-05-20 Issue:6 Volume:13 Page:066002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kim Sun Jung,Yong Sang Heon,Chae Heeyeop

Funder

National Research Foundation of Korea

Korea Institute for Advancement of Technology

Korea Institute of Energy Technology Evaluation and Planning

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab92f2/pdf

Reference27 articles.

1. Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

2. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

3. Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

4. Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

5. Atomic Layer Deposition: An Overview

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications;Journal of Vacuum Science & Technology A;2023-07-01

2. Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness;Silicon;2023-03-27

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