Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition-Reference-Cited by-同舟云学术

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Published:2014-05-28 Issue:9 Volume:211 Page:2166-2171
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jang Woochool¹,Jeon Heeyoung²,Kang Chunho¹³,Song Hyoseok¹,Park Jingyu²,Kim Hyunjung²,Seo Hyungtak⁴,Leskela Markku⁵,Jeon Hyeongtag¹²

Affiliation:

1. Division of Materials Science and Engineering; Hanyang University; Seoul 133-791 Korea

2. Department of Nano-scale Semiconductor Engineering; Hanyang University; Seoul 133-791 Korea

3. FAB Manufacturing Division; SK Hynix, Inc., 2091, Gyeongchung-daero, Bubal-eub, Icheon-si Gyeonggi-Do 167-701 Korea

4. Department of Materials Science and Engineering and Department of Energy Systems Research; Ajou University; Suwon 443-749 Korea

5. Department of Chemistry; University of Helsinki; P.O. Box 55 00014 Helsinki Finland

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Technology for machining high-refractory ceramic parts based on silicon nitride

2. Low Temperature Silicon Nitride by Hot Wire Chemical Vapour Deposition for the Use in Impermeable Thin Film Encapsulation on Flexible Substrates

3. Evaluation of silicon nitride as a diffusion barrier for Gd–Si–Ge films on silicon

4. Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor;Materials Science in Semiconductor Processing;2024-12

2. Investigation of silicon nitride for spacer via plasma-enhanced atomic layer deposition using a (tert-butylamino)dimethylsilane precursor;Applied Surface Science;2024-10

3. Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition;Electronics;2024-07-15

4. Memory device based on a nano-granulars and nano-worms structured MoS2 active layer: The origin of resistive switching characteristics;Vacuum;2024-04

5. Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry;Ceramist;2024-03-31