Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Published:2015-08-28 Issue:35 Volume:7 Page:19857-19862
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Knoops Harm C. M.¹²,Braeken Eline M. J.¹,de Peuter Koen¹,Potts Stephen E.³,Haukka Suvi⁴,Pore Viljami⁴,Kessels Wilhelmus M. M.¹

Affiliation:

1. Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands

2. Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP, U.K.

3. Queen Mary University of London, Mile End Road, London E1 4NS, U.K.

4. ASM, Pietari Kalmin katu 1 F 2, 00560 Helsinki, Finland

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Technologiestichting STW

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06833

Reference22 articles.

1. Challenges in spacer process development for leading-edge high-k metal gate technology

2. Atomic Layer Deposition of SiN for spacer applications in high-end logic devices

3. Atomic-layer chemical-vapor-deposition of silicon-nitride

4. Atomic layer controlled growth of Si3N4 films using sequential surface reactions

5. Atomic layer controlled deposition of silicon nitride with self‐limiting mechanism

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