Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
2. Preparation of microcrystalline Si1−xCx thin films
3. Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization
4. Origin of the Improved Performance of High-Deposition-Rate Microcrystalline Silicon Solar Cells by High-Pressure Glow Discharge
5. Development of high efficiency large area silicon thin film modules using VHF-PECVD
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1. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD;Materials Research Bulletin;2016-04
2. Hydrogen dilution on an undoped silicon oxide layer and Its application to amorphous silicon thin-film solar cells;Materials Science in Semiconductor Processing;2016-01
3. Improved photovoltaic properties of amorphous silicon thin-film solar cells with an un-doped silicon oxide layer;Materials Science in Semiconductor Processing;2015-03
4. Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties;Journal of Electronic Materials;2015-01-07
5. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells;Japanese Journal of Applied Physics;2014-01-01
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