Preparation of microcrystalline Si1−xCx thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338057
Reference4 articles.
1. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell
2. Low‐temperature crystallization of dopeda‐Si:H alloys
3. Effects of Target Materials on the Structural Properties of Sputtered SiC Films
4. Vapor growth of diamond on diamond and other surfaces
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1. Investigation on growth behavior of multiphase silicon carbon film for front contact layer in a Si thin film solar cell;Solar Energy Materials and Solar Cells;2014-08
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3. Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature;Japanese Journal of Applied Physics;2008-05-16
4. Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature;Journal of Non-Crystalline Solids;2008-05
5. Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell;Thin Solid Films;2008-01
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