Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature-Reference-Cited by-同舟云学术

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Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature

Published:2008-05 Issue:19-25 Volume:354 Page:2350-2354
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Miyajima Shinsuke,Sawamura Makoto,Yamada Akira,Konagai Makoto

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. HITTM cells?high-efficiency crystalline Si cells with novel structure

2. Impact of epitaxial growth at the heterointerface of a-Si:H∕c-Si solar cells

3. Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

4. Q. Wang, M.R. Page, E. Iwancizko, Y. Xu, L. Roybal, R. Bauer, D. Levi, Y. Yan, T. Wang, H.M. Branz, Mater. Res. Soc. Symp. Proc., vol. 989, 2007, 0989-A03-04.

5. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

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1. Silicon heterojunction solar cells with high surface passivation quality realized using amorphous silicon oxide films with epitaxial phase;Japanese Journal of Applied Physics;2015-04-01

2. Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition;AIP Conference Proceedings;2015

3. Dual hot-wire arrangement for the deposition of silicon and silicon carbide thin films;Thin Solid Films;2015-01

4. The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films;Journal of Materials Chemistry C;2015

5. Analysis of SiC Deposition Rate in a Tubular Hot-Wall Reactor with Polymeric Source Using the DoE Method;Journal of Electronic Materials;2013-03-01

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