The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films-Reference-Cited by-同舟云学术

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Published:2015 Issue:6 Volume:3 Page:1172-1176
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Phan Hoang-Phuong¹²³,Dao Dzung Viet¹²³⁴²,Wang Li¹²³,Dinh Toan¹²³,Nguyen Nam-Trung¹²³,Qamar Afzaal¹²³,Tanner Philip¹²³,Dimitrijev Sima¹²³⁴²,Zhu Yong¹²³⁴²

Affiliation:

1. Queensland Micro-Nanotechnology Centre

2. Griffith University

3. Australia

4. School of Engineering

Abstract

A significant piezoresistive effect in p-type nanocrystalline SiC with a gauge factor of 14.5 was reported. This result indicates that p-type nanocrystalline SiC is a good candidate for MEMS sensors used in harsh environments and bio applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02679A

Reference39 articles.

1. Silicon carbide as a new MEMS technology

2. P-type 3C-SiC nanowires and their optical and electrical transport properties

3. Silicon carbide MEMS for harsh environments

4. Growth of n-type 3C-SiC nanoneedles on carbon fabric: toward extremely flexible field emission devices

5. Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires

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