Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD-Reference-Cited by-同舟云学术

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Published:2016-04 Issue: Volume:76 Page:205-215
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Pawbake Amit,Mayabadi Azam,Waykar Ravindra,Kulkarni Rupali,Jadhavar Ashok,Waman Vaishali,Parmar Jayesh,Bhattacharyya Somnath,Ma Yuan‐Ron,Devan Rupesh,Pathan Habib,Jadkar Sandesh

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications;Afdi Yunaz;Sol. Energy Mater. Sol. Cells,2009

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