Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates-Reference-Cited by-同舟云学术

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Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates

Published:2008-01-22 Issue:1 Volume:47 Page:580-583
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Toyota Hideyuki,Sasaki Tomonori,Nakamura Shin-ichi,Jinbo Yoshio,Uchitomi Naotaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Molecular beam epitaxy of AlSb

2. Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE

3. The physics and technology of gallium antimonide: An emerging optoelectronic material

4. Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)

5. Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy;Advanced Physics Research;2024-08-22

2. An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate;Japanese Journal of Applied Physics;2019-07-17

3. Effect of flux ratio on GaSb films grown at a low temperature on Si(111);2019 Joint 8th International Conference on Informatics, Electronics & Vision (ICIEV) and 2019 3rd International Conference on Imaging, Vision & Pattern Recognition (icIVPR);2019-05

4. Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy;Journal of Crystal Growth;2019-02

5. Growth Nature of InSb Channel Layer on Heteroepitaxial Films of InGaSb Layer on GaSb/Si(111)-√3 × √3-Ga Surface Phase;e-Journal of Surface Science and Nanotechnology;2018

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