Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy-Reference-Cited by-同舟云学术

Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy

Published:2019-02 Issue: Volume:507 Page:357-361
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Machida Ryuto,Akahane Kouichi^ORCID,Watanabe Issei,Hara Shinsuke,Fujikawa Sachie^ORCID,Kasamatsu Akifumi,Fujishiro Hiroki I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

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4. Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer;Desplanque;Appl. Phys. Lett.,2012

5. Room-temperature operation of buffer-free GaSb–AlGaSb quantum-well diode lasers grown on a GaAs platform emitting at 1.65 μm;Mehta;IEEE Photon. Technol. Lett.,2007

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2. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique;East European Journal of Physics;2023-09-04

3. III–V Optoelectronic Devices Grown on Silicon;digital Encyclopedia of Applied Physics;2021-06-14

4. Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer;Journal of Crystal Growth;2020-01